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Apha sibonisa i-imbibition-induced, ngokuzenzekelayo kunye neepropati zokumanzisa ezikhethiweyo zealloyi zesinyithi ezisekelwe kwi-gallium kumphezulu owenziwe ngesinyithi kunye ne-microscale topographical features.Iialloyi zetsimbi esekwe kwiGallium zizinto ezimangalisayo ezinoxinzelelo olukhulu lomphezulu.Ngoko ke, kunzima ukubenza kwiifilimu ezincinci.Ukumanzisa okupheleleyo kwe-eutectic alloy ye-gallium kunye ne-indium kwaphunyezwa kumphezulu wobhedu owenziwe nge-microstructured phambi komphunga we-HCl, osuse i-oxide yendalo kwi-alloy yensimbi engamanzi.Oku kumanzisa kuchazwa ngokwamanani ngokusekwe kwimodeli ye-Wenzel kunye nenkqubo ye-osmosis, ebonisa ukuba ubungakanani be-microstructure bubalulekile ekumanziseni okusebenzayo okubangelwa yi-osmosis kwiintsimbi ezingamanzi.Ukongeza, sibonisa ukuba ukumanzisa okuzenzekelayo kweentsimbi ezingamanzi kunokwalathiswa ngokukhethayo kunye nemimandla emincinci kwisiseko sesinyithi ukwenza iipateni.Le nkqubo ilula ngokulinganayo iidyasi kunye neemilo zesinyithi elulwelo phezu iindawo ezinkulu ngaphandle amandla angaphandle okanye yokuphatha ezintsonkothileyo.Siye sabonisa ukuba i-substrates enepateni yesinyithi elulwelo igcina uqhagamshelo lombane naxa isoluliwe nasemva kwemijikelo ephindaphindiweyo yokolula.
I-Gallium esekelwe kwi-alloys yensimbi ye-liquid (i-GaLM) iye yatsala ingqalelo enkulu ngenxa yezinto ezikhangayo ezifana ne-melting point, i-conductivity ephezulu yombane, i-viscosity ephantsi kunye nokuhamba, ubuthi obuphantsi kunye nokukhubazeka okuphezulu1,2.Igallium esulungekileyo inendawo yokunyibilika emalunga ne-30 °C, kwaye xa idityaniswe kwimixholo ye-eutectic nezinye iintsimbi ezifana ne-In kunye ne-Sn, indawo yokunyibilika ingaphantsi kobushushu begumbi.Ii-GALM ezimbini ezibalulekileyo yi-gallium indium eutectic alloy (EGaIn, 75% Ga kunye ne-25% In ngobunzima, indawo yokunyibilika: 15.5 °C) kunye ne-gallium indium tin eutectic alloy (GaInSn okanye i-galinstan, 68.5% Ga, 21.5% In, kunye ne-10% I-% yetoti, indawo yokunyibilika: ~11 °C)1.2.Ngenxa yokuqhutywa kombane kwisigaba solwelo, ii-GLMs ziphandwa ngokukhutheleyo njengeendlela ezixineneyo okanye ezinokonakala ze-elektroniki kwiinkqubo ezahlukeneyo, kubandakanya i-electronic3,4,5,6,7,8,9 strained or curved sensors 10, 11, 12 , 13, 14 kunye nesikhokelo 15, 16, 17. Ukwenziwa kwezixhobo ezinjalo ngokufaka, ukuprinta, kunye neepateni ezivela kwi-GALM kufuna ulwazi kunye nokulawulwa kweepropati ezihlangeneyo ze-GALM kunye ne-substrate yayo engaphantsi.Ii-GALM zinexinzelelo oluphezulu (624 mNm-1 ye-EGaIn18,19 kunye ne-534 mNm-1 ye-Galinstan20,21) enokwenza kube nzima ukuyiphatha okanye ukuyilawula.Ukubunjwa kwe-crust hard of native gallium oxide kumphezulu we-GALM phantsi kweemeko ze-ambient kunika igobolondo elizinzisa i-GALM kwimilo engekho-spherical.Le propati ivumela i-GaLM ukuba ishicilelwe, ifakwe kwii-microchannels, kwaye ifaniswe kunye nokuzinza kwe-interfacial ephunyezwe yi-oxides19,22,23,24,25,26,27.Iqokobhe le-oksidi eqinile likwavumela i-GaLM ukuba ibambelele kwiindawo ezininzi ezigudileyo, kodwa inqanda isinyithi se-viscosity ephantsi ukuba ihambe ngokukhululekileyo.Ukusasazwa kwe-GALM kwiindawo ezininzi kufuna ukunyanzeliswa ukuphula igobolondo le-oxide28,29.
Iigobolondo ze-oxide zinokususwa kunye, umzekelo, ii-acids ezinamandla okanye iziseko.Xa zingekho ii-oksidi, iifom ze-GALM ziwela phantse kuyo yonke imiphezulu ngenxa yoxinzelelo olukhulu lomphezulu, kodwa kukho iimeko ezingaqhelekanga: i-GaLM imanzisa ii-substrates zentsimbi.I-Ga yenza iibhondi zentsimbi kunye nezinye iintsimbi ngenkqubo eyaziwa ngokuba yi-“reactive wetting”30,31,32.Oku kumanzisa okusebenzayo kudla ngokuvavanywa ngokungabikho kweeoksidi zangaphezulu ukwenza lula ukudibana kwesinyithi ukuya kwintsimbi.Nangona kunjalo, kunye neeoksidi zendalo kwi-GaLM, kuye kwaxelwa ukuba unxibelelwano lwesinyithi ukuya kwintsimbi lwenza xa iioksidi ziqhekeka kunxibelelwano kunye nomphezulu wesinyithi ogudileyo29.Ukumanzisa okusebenzayo kuphumela kwii-angles zoqhagamshelwano eziphantsi kunye nokumanzisa okulungileyo kwii-substrates ezininzi zetsimbi33,34,35.
Ukuza kuthi ga ngoku, uphando oluninzi luye lwenziwa malunga nokusetyenziswa kweempawu ezithandekayo zokumanzisa okusebenzayo kwe-GaLM ngeentsimbi ukwenza ipateni ye-GaLM.Ngokomzekelo, i-GaLM isetyenziswe kwiindlela zetsimbi eziqingqiweyo ngokuthambisa, ukuqengqeleka, ukutshiza, okanye i-shadow masking34, 35, 36, 37, 38. Ukumanzisa okukhethiweyo kwe-GALM kwiintsimbi ezinzima kuvumela i-GaLM ukuba yenze iipateni ezizinzileyo nezichazwe kakuhle.Nangona kunjalo, ukuxinana okuphezulu komphezulu we-GaLM kuthintela ukwakheka kweefilimu ezibhityileyo ezikumgangatho ophezulu nakwizinto ezincinci zentsimbi.Ukujongana nalo mbandela, uLacour et al.ichaze indlela yokuvelisa iifilimu ezigudileyo, ezisicaba ze-GALM ezicekethekileyo kwiindawo ezinkulu ngokukhupha igallium esulungekileyo kwi-microstructured substrates eqatywe ngegolide37,39.Le ndlela idinga ukufakwa kwevacuum, ecotha kakhulu.Ukongeza, i-GaLM ayivumelekanga ngokubanzi kwizixhobo ezinjalo ngenxa ye-embrittlement enokwenzeka40.I-Evaporation iphinda ifake izinto kwi-substrate, ngoko ke ipateni iyafuneka ukwenza ipateni.Sijonge indlela yokwenza iifilimu ze-GaLM ezigudileyo kunye neepateni ngokuyila iimpawu zetsimbi ye-topographic ethi i-GaLM imanzise ngokuzenzekelayo kwaye ngokukhethayo ngokungabikho kwee-oxide zendalo.Apha sinika ingxelo yokumanzisa okuzenzekelayo okukhethiweyo kwe-EGaIn engena-oxide (i-GaLM eqhelekileyo) kusetyenziswa indlela ekhethekileyo yokuziphatha yokumanzisa kwiisubstrates zentsimbi ezenziwe ngefotographically.Senza izakhiwo ze-photolithographically ezichazwe kumgangatho omncinci wokufunda i-imbibition, ngaloo ndlela silawula ukumanzisa kwesinyithi esingena-oxide.Iimpawu zokumanzisa eziphuculweyo ze-EGaIn kwimiphezulu yesinyithi ye-microstructured ichazwa ngohlalutyo lwamanani olusekwe kwimodeli ye-Wenzel kunye nenkqubo yokufakwa.Okokugqibela, sibonisa ukubekwa kwendawo enkulu kunye nepateni ye-EGaIn ngokuzifunxa, ngokuzenzekela kunye nokukhetha ukumanzisa kwiindawo zokubeka isinyithi.Ii-electrode eziqinileyo kunye neegeyiji zoxinzelelo ezibandakanya izakhiwo ze-EGaIn zibonakaliswa njengezicelo ezinokubakho.
Ukufunxa luthutho lwe-capillary apho ulwelo luhlasela i-texture surface 41, eququzelela ukusasazeka kolwelo.Siphande ukuziphatha kokumanzisa kwe-EGaIn kwimiphezulu yesinyithi ye-microstructured efakwe kumphunga we-HCl (Umfanekiso woku-1).Ubhedu lwakhethwa njengesinyithi somgangatho ongaphantsi. Kwiindawo zobhedu ezisicaba, i-EGaIn ibonise i-angle yoqhagamshelwano ephantsi ye-<20 ° phambi komphunga we-HCl, ngenxa ye-reactive wetting31 (Fig. 1). Kwiindawo zobhedu ezisicaba, i-EGaIn ibonise i-angle yoqhagamshelwano ephantsi ye-<20 ° phambi komphunga we-HCl, ngenxa ye-reactive wetting31 (Fig. 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20 ° в присутствии паров HCl из-за реактивного смачиванивания31 (дополния31). Kwiindawo zobhedu ezisicaba, i-EGaIn ibonise i-angle ephantsi ye-<20 ° yoqhagamshelwano ebusweni bomphunga weHCl ngenxa yokumanzisa okusebenzayo31 (Umfanekiso owongezelelweyo 1).在平坦的铜表面上，由于反应润湿，EGaIn 在存在HCl 蒸气的情况下显示<20° 的低接触角31（角31).在平坦的铜表面上，由于反应润湿，EGaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20 ° в присутствии паров HCl Kwiindawo zobhedu ezisicaba, i-EGaIn ibonisa ii-angles eziphantsi ze-<20 ° zoqhagamshelwano kubukho bomphunga weHCl ngenxa yokumanzisa okusebenzayo (Umfanekiso owongezelelweyo 1).Silinganise ii-angles ezisondeleyo ze-EGaIn kwi-copper eninzi kunye neefilimu zobhedu ezifakwe kwi-polydimethylsiloxane (PDMS).
iKholamnar (D (ububanzi) = l (umgama) = 25 µm, d (umgama phakathi kweentsika) = 50 µm, H (ubude) = 25 µm) kunye nephiramidi (ububanzi = 25 µm, ubude = 18 µm) i-microstructures kwi-Cu /PDMS substrates.b Utshintsho oluxhomekeke kwixesha kwi-angle yoqhagamshelwano kwii-substrates ezisicaba (ngaphandle kwe-microstructures) kunye neentlobo zeentsika kunye neepiramidi eziqukethe i-PDMS yobhedu.c, d Ushicilelo lwesithuba (c) imbonakalo yecala kunye (d) nembonakalo ephezulu ye-EGaIn yokumanzisa kumphezulu ngeentsika phambi komphunga weHCl.
Ukuvavanya umphumo we-topography kwi-wetting, i-substrates ye-PDMS ene-columnar kunye nephethini yepyramidal yalungiswa, apho ubhedu lufakwe kwi-titanium adhesive layer (Fig. 1a).Kwaboniswa ukuba i-microstructured surface ye-PDMS substrate yayifakwe ngokufanelekileyo ngobhedu (i-Supplementary Fig. 2).Ii-angles zoqhagamshelwano ezixhomekeke kwixesha le-EGaIn kwi-PDMS ene-copper-sputtered (Cu/PDMS) ecwangcisiweyo iboniswe kwiFig.1b.I-angle yoqhagamshelwano ye-EGaIn kwipatheni yobhedu/PDMS yehla ukuya ku-0 ° ngaphakathi kwe-~1 min.Ukumanzisa okuphuculweyo kwe-EGaIn microstructures kungasetyenziswa yi-Wenzel equation\({{{{\rm{cos}}}}}}}\,{\theta}_{{{rough}}=r\,{{{{{ \rm{cos}}}}}}\,{\theta}_{0}\), apho \({\theta}_{{{{rough}}}}\) imele i-engile yoqhagamshelwano yomphezulu orhabaxa, \ (r NONEIziphumo zokumanzisa okuphuculweyo kwe-EGaIn kumphezulu onepateni zivumelana kakuhle nemodeli ye-Wenzel, kuba amaxabiso e-r omqolo kunye nomgangatho owenziwe ngephiramidi yi-1.78 kunye ne-1.73, ngokulandelelanayo.Oku kukwathetha ukuba ithontsi ye-EGaIn ebekwe kumphezulu oyipatheni iya kungena kwimijelo yoncedo olungaphantsi.Kubalulekile ukuba uqaphele ukuba iifilimu ezinqamlekileyo ezifanayo kakhulu zenziwa kule meko, ngokungafaniyo nemeko kunye ne-EGaIn kwiindawo ezingalungiswanga (i-Supplementary Fig. 1).
Ukususela kwikhiwane.I-1c, d (i-Movie eyoNgezelelweyo 1) inokubonwa ukuba emva kwe-30 s, njengoko i-angle yoqhagamshelwano ebonakalayo isondela kwi-0 °, i-EGaIn iqala ukusabalalisa kude nomda wokuhla, okubangelwa ukuxutywa (i-Supplementary Movie 2 kunye ne-Supplementary). Umzobo 3).Uphononongo lwangaphambili lomphezulu osicaba lunxulumanise isikali sexesha lokumanzisa okusebenzayo kunye notshintsho ukusuka kwi-inertial ukuya kumanzi abonakalayo.Ubungakanani bomhlaba yenye yezinto eziphambili ekunqumeni ukuba i-self-priming iyenzeka.Ngokuthelekisa amandla angaphezulu ngaphambi nangemva kwe-imbibition ukusuka kwindawo yokujonga ye-thermodynamic, i-angle yoqhagamshelwano ebalulekileyo \ ({\theta}_{c}\) ye-imbibition yafunyanwa (jonga iNgxoxo eyoNgezelelweyo ngeenkcukacha).Isiphumo \({\theta}_{c}\) sichazwa njenge \({{({\rm{cos))))))\,{\theta}_{c}=(1-{\) phi } _{S})/(r-{\phi}_{S})\) apho \({\phi}_{s}\) imele indawo yolwahlulo phezulu kweposi kwaye \(r\) ) imele uburhabaxa bomphezulu. Imbibition ingenzeka xa \({\theta }_{c}\) > \({\theta }_{0}\), okt, i-engile yoqhagamshelwano kumphezulu osicaba. Imbibition ingenzeka xa \({\theta }_{c}\) > \({\theta }_{0}\), okt, i-engile yoqhagamshelwano kumphezulu osicaba. Впитывание может происходить, когда \ ({\ theta } _ {c} \) > \ ({\ theta } _ {0} \), т.е.контактный угол на плоской поверхности. Ukufunxa kungenzeka xa \({\theta }_{c}\) > \({\theta }_{0}\), okt i-engile yoqhagamshelwano kumphezulu osicaba.当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。 Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Ukufunxa kwenzeka xa \({\theta }_{c}\) > \({\theta }_{0}\), i-angle yoqhagamshelwano kwinqwelomoya.Kwimiphezulu eyenziwe ngasemva, \(r\) kunye \({\phi}_{s}\) zibalwa njenge \(1+\{(2\pi {RH}))/{d}^{2} \ } \ ) kunye \(\pi {R}^{2}/{d}^{2}\), apho \(R\) imele iradiyasi yomhlathi, \(H\) imele ubude bomhlathi, kunye \ ( d \) ngumgama phakathi kwamaziko eentsika ezimbini (Umfanekiso 1a).Kumhlaba owenziwe ngasemva kwifig.1a, i-engile \({\theta}_{c}\) yi-60 °, enkulu kune \({\theta}_{0}\) inqwelomoya (~25 ° ) kwiHCl umphunga Oxide-free EGaIn kwiCu/PDMS.Ke ngoko, amathontsi e-EGaIn anokuhlasela ngokulula indawo yokubeka ubhedu eyakhiweyo kuMfanekiso 1a ngenxa yokufunxa.
Ukuphanda umphumo wesayizi ye-topographic yepateni yokumanzisa kunye nokufunxa kwe-EGaIn, sahluke ngobukhulu beentsika ezigqunywe ngobhedu.Kwikhiwane.I-2 ibonisa ii-engile zoqhagamshelwano kunye nokufunxa kwe-EGaIn kwezi substrates.Umgama l phakathi kweekholomu ulingana nobubanzi beekholomu D kunye noluhlu ukusuka kwi-25 ukuya kwi-200 μm.Ubude be-25 µm buhlala buhleli kuzo zonke iikholamu.\({\ theta}_{c}\) iyancipha ngokunyuka kobungakanani bekholomu (Itheyibhile 1), okuthetha ukuba ukufunxa kuncinci kwi-substrates eneentsika ezinkulu.Kubo bonke ubungakanani obuvavanyiweyo, \({\theta}_{c}\) inkulu kune \({\theta}_{0}\) kwaye i-wicking ilindelwe.Nangona kunjalo, ukufunxwa kunqabile ukujongwa kwimigangatho ye-post-patterned nge-l kunye ne-D 200 µm (Fig. 2e).
I-angle yoqhagamshelwano exhomekeke kwixesha le-EGaIn kumphezulu we-Cu/PDMS kunye neekholamu ezinobukhulu obahlukeneyo emva kokuvezwa ngumphunga weHCl.b–e Iimbono eziphezulu nezisecaleni ze-EGaIn yokumanzisa.b D = l = 25 µm, r = 1,78.kwi-D = l = 50 μm, r = 1,39.dD = l = 100 µm, r = 1.20.eD = l = 200 µm, r = 1.10.Zonke izithuba zinobude obungama-25 µm.Le mifanekiso ithathwe ubuncinane kwimizuzu eyi-15 emva kokuvezwa ngumphunga weHCl.Amathontsi akwi-EGaIn ngamanzi aphuma kwimpendulo phakathi kwegallium oxide kunye nomphunga weHCl.Zonke iibar zesikali kwi-(b – e) ziyi-2 mm.
Enye ikhrayitheriya yokumisela ukuba nokwenzeka kokufunxa ulwelo kukulungiswa kolwelo kumphezulu emva kokuba iphethini isetyenzisiwe.UKurbin et al.Kuye kwaxelwa ukuba xa (1) izithuba ziphezulu ngokwaneleyo, amathontsi aya kutsalwa ngumgangatho owenziweyo;(2) umgama phakathi kweentsika mncinci;kunye (3) ne-engile yoqhagamshelwano yolwelo kumphezulu incinci ngokwaneleyo42.Ngokwenombolo \({\theta}_{0}\) yolwelo kwinqwelomoya equlethe imathiriyeli engaphantsi komhlaba efanayo kufuneka ibe ngaphantsi kwe-engile yoqhagamshelwano ebalulekileyo yokuphina, \({\theta}_{c,{pin)) } \ ), ukufunxa ngaphandle kokuqhobosha phakathi kwezithuba, apho \({\theta}_{c,{pin}}}={{{{\rm{arctan}}}}}}(H/\big \{ ( \ sqrt {2}-1)l\big\})\) (jonga ingxoxo eyongezelelweyo ngeenkcukacha).Ixabiso le \({\theta}_{c,{pin}}\) ixhomekeke kubungakanani bephini (Itheyibhile 1).Qinisekisa iparameter engenamda L = l/H ukugweba ukuba ukufunxa kwenzeka.Ukufunxa, u-L kufuneka abe ngaphantsi komgangatho ophakathi, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\tan} } {\ theta}_{0}\enkulu\}\).Ku-EGaIn \({\theta}_{0}={25}^{\circ})\) kwi-substrate yobhedu \({L}_{c}\) yi-5.2.Ekubeni ikholomu ye-L ye-200 μm yi-8, inkulu kunexabiso le-\({L}_{c}\), ukufunxa kwe-EGaIn akwenzeki.Ukuqhubela phambili ukuvavanya umphumo wejometri, sabona i-self-priming ye-H kunye ne-l (i-Supplementary Fig. 5 kunye neTheyibhile eyoNgezelelweyo 1).Iziphumo zivumelana kakuhle nezibalo zethu.Ngaloo ndlela, i-L ijika ibe yi-predictor esebenzayo yokufunxa;intsimbi engamanzi iyayeka ukufunxa ngenxa yokukhongozela xa umgama phakathi kweentsika umkhulu ngokuthelekiswa nobude beentsika.
Ukumanzisa kunokumiselwa ngokusekelwe kubume bomhlaba we-substrate.Siphande umphumo wokubunjwa komphezulu wokumanzisa kunye nokufunxa kwe-EGaIn ngokudibanisa i-Si kunye ne-Cu kwiintsika kunye neenqwelomoya (umzobo owongezelelweyo we-6).I-angle yoqhagamshelwano ye-EGaIn iyancipha ukusuka ~ 160 ° ukuya kwi-80 ° njengoko i-Si / Cu i-binary surface inyuka ukusuka kwi-0 ukuya kwi-75% kumxholo wobhedu osicaba.Kumphezulu we-75% Cu/25% Si, \({\theta}_{0}\) yi ~80 °, ehambelana ne \({L}_{c}\) ilingana no-0.43 ngokwengcaciso engentla .Ngenxa yokuba iikholamu l = H = 25 μm nge L ilingana no-1 omkhulu kunomqobo \({L}_{c}\), i-75% Cu / 25% ye-Si umphezulu emva kwepatheni ayifunxi ngenxa yokungashukumi.Ekubeni i-angle yoqhagamshelwano ye-EGaIn inyuka ngokudibanisa kwe-Si, i-H ephezulu okanye i-l ephantsi iyadingeka ukuze unqobe i-pinning kunye nokukhulelwa.Ngoko ke, ekubeni i-angle yoqhagamshelwano (okt \({\theta}_{0}\)) ixhomekeke kukwakheka kweekhemikhali zomphezulu, inokugqiba ukuba i-imbibition yenzeke kwi-microstructure.
Ukufunxwa kwe-EGain kubhedu olunepateni/iPDMS inokumanzisa intsimbi engamanzi ibe ziipateni eziluncedo.Ukuze uvavanye inani elincinci lemigca yekholomu ebangela i-imbibition, iimpawu zokumanzisa ze-EGaIn zabonwa kwi-Cu / PDMS kunye nemigca ye-post-pattern equkethe amanani ahlukeneyo omgca wekholomu ukusuka kwi-1 ukuya kwi-101 (umzobo 3).Ukumanzisa kwenzeka ikakhulu kwingingqi ye-post-patterning.I-EGaIn wicking yayijongwa ngokuthembekileyo kwaye ubude be-wicking banda kunye nenani lemiqolo yeekholomu.Ukufunxa phantse akunakuze kwenzeke xa kukho izithuba ezinemigca emibini okanye ngaphantsi.Oku kungenxa yokwanda koxinzelelo lwe-capillary.Ukuze ukufunxa kwenzeke kwipatheni yekholomu, uxinzelelo lwe-capillary olubangelwa ukugoba kwentloko ye-EGaIn kufuneka lunqotshwe (i-Supplementary Fig. 7).Ukuthatha iradiyasi yegophe ye-12.5 µm kumqolo omnye wentloko ye-EGaIn enepateni yekholomu, uxinzelelo lwe-capillary yi-~0.98 atm (~740 Torr).Olu xinzelelo luphezulu lweLaplace lunokuthintela ukumanzisa okubangelwa kukufunxa kwe-EGaIn.Kwakhona, imiqolo embalwa yeekholomu inokunciphisa amandla okufunxa ngenxa yesenzo se-capillary phakathi kwe-EGaIn kunye neekholamu.
a Amathontsi e-EGaIn kwi-Cu/PDMS ecwangcisiweyo eneepateni zobubanzi obahlukeneyo (w) emoyeni (phambi kokuvezwa ngumphunga weHCl).Imiqolo yeeracks ukusuka phezulu: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), kunye ne-11 (w = 525 µm).b Ukumanziswa okuthe ngqo kwe-EGaIn ku-(a) emva kokuba sesichengeni somoya weHCl kangangemizuzu eli-10.c, d Ukumanzisa kwe-EGaIn kwi-Cu/PDMS enezakhiwo eziziintsika (c) imiqolo emibini (w = 75 µm) kunye (d) nomqolo omnye (w = 25 µm).Le mifanekiso ithathwe kwimizuzu eyi-10 emva kokuvezwa ngumphunga weHCl.Imivalo yokulinganisa ku-(a, b) kunye no-(c, d) yi-5 mm kunye nama-200 µm, ngokulandelelanayo.Iintolo eziku-(c) zibonisa ukugoba kwentloko ye-EGaIn ngenxa yokufunxa.
Ukufakwa kwe-EGaIn kwi-post-patterned Cu / PDMS ivumela i-EGaIn ukuba yenziwe ngokumanzisa okukhethiweyo (umzobo 4).Xa i-drop ye-EGaIn ibekwe kwindawo enepateni kwaye ibonakaliswe kumphunga we-HCl, i-drop ye-EGaIn iyawa kuqala, yenze i-angle encinci yokudibanisa njengoko i-asidi isusa isikali.Emva koko, ukufunxa kuqala ukusuka kumda wethontsi.Ipateni yendawo enkulu inokufezekiswa kwi-EGaIn yeesentimitha (umzobo 4a, c).Ekubeni ukufunxa kwenzeka kuphela kumphezulu we-topographic, i-EGaIn imanzisa kuphela indawo yepateni kwaye iphantse iyeke ukumanzisa xa ifikelela kumphezulu osicaba.Ngenxa yoko, imida ebukhali yeepateni ze-EGaIn zibonwa (Umfanekiso 4d, e).Kwikhiwane.I-4b ibonisa indlela i-EGaIn ehlasela ngayo ummandla ongalungiswanga, ngakumbi kwindawo engqonge indawo apho i-droplet ye-EGaIn yayibekwe khona kuqala.Oku kwakungenxa yokuba i-diameter encinci ye-droplets ye-EGaIn esetyenziswe kolu phando igqithise ububanzi beepateni zoonobumba.I-drops ye-EGaIn ifakwe kwisayithi yepateni nge-injection manual ngokusebenzisa inaliti ye-27-G kunye nesirinji, okubangelwa amaconsi kunye nobukhulu obuncinci be-1 mm.Le ngxaki ingasonjululwa ngokusebenzisa amathontsi amancinane e-EGaIn.Ngokubanzi, uMzobo we-4 ubonisa ukuba ukumanzisa okuzenzekelayo kwe-EGaIn kunokunyanzeliswa kwaye kubhekiswe kwimigangatho emincinci.Xa kuthelekiswa nomsebenzi wangaphambili, le nkqubo yokumanzisa ikhawuleza kwaye akukho mandla angaphandle afunekayo ukuze kufezekiswe ukumanzisa okupheleleyo (Itheyibhile eyoNgezelelweyo yesi-2).
umfuziselo weyunivesithi, unobumba u-b, c ngokohlobo lwesibane sombane.Ummandla ofunxayo ugqunywe ngoluhlu lweekholamu ezino-D = l = 25 µm.d, imifanekiso eyandisiweyo yeembambo ku-e (c).Imivalo yokulinganisa ku-(a–c) kunye (d, e) yi-5 mm kunye nama-500 µm, ngokulandelelanayo.Kwi-(c–e), amathontsi amancinane kumphezulu emva kwe-adsorption ajika abe ngamanzi ngenxa yokusabela phakathi kwe-gallium oxide kunye nomphunga weHCl.Akukho mpembelelo ibalulekileyo yokubunjwa kwamanzi ekumanziseni yabonwa.Amanzi asuswa ngokulula ngenkqubo yokomisa elula.
Ngenxa yendalo yolwelo lwe-EGaIn, i-EGaIn efakwe kwi-Cu / PDMS (EGaIn / Cu / PDMS) ingasetyenziselwa i-electrodes eguquguqukayo kunye neyolula.Umzobo 5a uthelekisa utshintsho oluchasayo lweCu / PDMS yasekuqaleni kunye ne-EGaIn / Cu / PDMS phantsi kwemithwalo eyahlukeneyo.Ukuchasana kwe-Cu / PDMS kuphakama ngokukhawuleza kwixinzelelo, ngelixa ukuchasana kwe-EGaIn / Cu / PDMS kuhlala kuphantsi kwixinzelelo.Kwikhiwane.I-5b kunye ne-d ibonisa imifanekiso ye-SEM kunye nedatha ye-EMF ehambelanayo ye-Cu / PDMS eluhlaza kunye ne-EGaIn / Cu / PDMS ngaphambi nangemva kwesicelo sombane.Kwi-Cu / PDMS engaguqukiyo, i-deformation inokubangela ukuqhekeka kwifilimu ye-Cu enzima efakwe kwi-PDMS ngenxa yokungalingani kwe-elasticity.Ngokwahlukileyo, kwi-EGaIn / Cu / PDMS, i-EGaIn isanxibe kakuhle i-Cu / PDMS substrate kwaye igcina ukuqhubeka kombane ngaphandle kokuqhekeka okanye ukuguqulwa okubalulekileyo nasemva kokusetyenziswa koxinzelelo.Idatha ye-EDS iqinisekisile ukuba i-gallium kunye ne-indium esuka kwi-EGaIn yasasazwa ngokulinganayo kwi-substrate ye-Cu/PDMS.Kuyaphawuleka ukuba ubukhulu befilimu ye-EGaIn bufana kwaye buqhathaniswa nokuphakama kweentsika. Oku kuphinda kuqinisekiswe ngohlalutyo olongezelelweyo lwe-topographical, apho umehluko ohambelanayo phakathi kobukhulu befilimu ye-EGaIn kunye nokuphakama kwesithuba ngu- <10% (i-Supplementary Fig. 8 kunye neThebhile 3). Oku kuphinda kuqinisekiswe ngohlalutyo olongezelelweyo lwe-topographical, apho umehluko ohambelanayo phakathi kobukhulu befilimu ye-EGaIn kunye nokuphakama kwesithuba ngu- <10% (i-Supplementary Fig. 8 kunye neThebhile 3). Это также подтверждается дальнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn и выпльзото % ьный рис kunye ne-таблица 3). Oku kwakhona kuqinisekiswa ngohlalutyo olongezelelweyo lwe-topographical, apho umehluko ohambelanayo phakathi kobunzima befilimu ye-EGaIn kunye nokuphakama kwekholomu yi-<10% (i-Supplementary Fig. 8 kunye neThebhile 3).进一步的形貌分析也证实了這一点，其中EGaIn 薄膜厚度与柱子高度之间的相对差异 <10%（光血。 <10% Это также было подтверждено дальнейшим топографическим анализом, где относительная разница между тольнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn и выпльзото % ‧ ьный рис kunye ne-таблица 3). Oku kwaqinisekiswa kwakhona ngohlalutyo oluqhubekayo lwe-topographical, apho umahluko ohambelanayo phakathi kobukhulu befilimu ye-EGaIn kunye nobude bekholomu yayingu-<10% (i-Supplementary Fig. 8 kunye neThebhile 3).Oku kumanzisa okusekwe kwi-imbition kuvumela ubukhulu be-EGaIn yokwambathisa ukuba bulawuleke kakuhle kwaye bugcinwe buzinzile kwiindawo ezinkulu, nto leyo engumceli mngeni ngenxa yobume bayo bolwelo.Amanani e-5c kunye ne-e aqhathanise i-conductivity kunye nokuchasana nokuguqulwa kwe-Cu / PDMS yasekuqaleni kunye ne-EGaIn / Cu / PDMS.Kwidemo, i-LED ivuliwe xa iqhagamshelwe kwi-Cu / PDMS engasetyenziswanga okanye i-EGaIn/Cu/PDMS electrodes.Xa i-Cu/PDMS engaguqukiyo yoluliwe, i-LED iyacima.Nangona kunjalo, i-electrode ye-EGaIn/Cu/PDMS yahlala iqhagamshelwe ngombane naphantsi komthwalo, kwaye ukukhanya kwe-LED kuye kwancipha kancinci ngenxa yokwanda kokuxhathisa i-electrode.
Utshintsho oluqhelekileyo lokuchasa kunye nokwanda komthwalo kwi-Cu/PDMS kunye ne-EGaIn/Cu/PDMS.b, d imifanekiso ye-SEM kunye ne-energy dispersive X-ray spectroscopy (EDS) uhlalutyo phambi (phezulu) nasemva (ezantsi) iipolydiplexes ezilayishwe kwi (b) Cu/PDMS kunye (d) EGaIn/Cu/methylsiloxane.c, e ii-LED ezincanyathiselwe (c) Cu/PDMS kunye (e) EGaIn/Cu/PDMS phambi (phezulu) nasemva (ezantsi) ukolula (~30% uxinzelelo).Ibar yesikali ku-(b) kunye no (d) ngama-50 µm.
Kwikhiwane.I-6a ibonisa ukuchasana kwe-EGaIn / Cu / PDMS njengomsebenzi woxinzelelo ukusuka kwi-0% ukuya kwi-70%.Ukunyuka kunye nokubuyiswa kokuchasana kuhambelana ne-deformation, ehambelana kakuhle nomthetho wePouillet wezinto ezingenakulinganiswa (R / R0 = (1 + ε) 2), apho i-R ixhathisa, i-R0 iqala ukuchasana, ε i-strain 43. Olunye uphononongo lubonise ukuba xa xa lusoluliwe, amasuntswana aqinileyo kwindawo yolwelo angazilungisa kwakhona kwaye asasazeke ngokulinganayo kunye nobumbano olungcono, ngaloo ndlela kunciphisa ukwanda kwe-drag 43, 44. Kulo msebenzi, nangona kunjalo, i-conductor yi> 99% yentsimbi ye-liquid ngevolumu ekubeni iifilimu ze-Cu ziyi-100 nm kuphela ubukhulu. Kulo msebenzi, nangona kunjalo, i-conductor yi> 99% yentsimbi ye-liquid ngevolumu ekubeni iifilimu ze-Cu ziyi-100 nm kuphela ubukhulu. Однако в этой работе проводник состоит из >99% жидкого металла по объему, так как пленки Cu имеют толщину всего 100 нм. Nangona kunjalo, kulo msebenzi, umqhubi uquka> i-99% yensimbi ye-liquid ngevolumu, ekubeni iifilimu ze-Cu ziyi-100 nm kuphela.然而，在這项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99% 的液态金属（按体积计）.然而，在這项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99%Nangona kunjalo, kulo msebenzi, ekubeni ifilimu ye-Cu i-100 nm kuphela ubukhulu, i-conductor iqulethe ngaphezu kwe-99% yesinyithi engamanzi (ngomthamo).Ngoko ke, asilindelanga ukuba uCu enze igalelo elibalulekileyo kwiipropati ze-electromechanical of conductors.
Utshintsho oluqhelekileyo kwi-EGaIn / Cu / PDMS yokumelana nokuxhatshazwa kuluhlu lwe-0-70%.Uxinzelelo oluphezulu olufikelelwe phambi kokungaphumeleli kwePDMS yi-70% (i-Supplementary Fig. 9).Amachaphaza abomvu ziinqobo zethiyori ezixelwe kwangaphambili ngumthetho kaPuet.b Uvavanyo lwe-EGaIn/Cu/PDMS lokuzinza kozinzo ngexesha lokuphindaphinda imijikelo yokwelula.I-30% yoxinzelelo isetyenziswe kuvavanyo lwe-cyclic.Ibar yesikali kwi-inset yi-0.5 cm.L ubude bokuqala be-EGaIn/Cu/PDMS ngaphambi kokwelula.
Umlinganiselo wokulinganisa (GF) uvakalisa uvakalelo lwenzwa kwaye ichazwa njengomlinganiselo wenguqu ekuchaseni ukutshintsha kwi-strain45.I-GF inyuke ukusuka kwi-1.7 kwi-10% yoxinzelelo ukuya kwi-2.6 kwi-70% yoxinzelelo ngenxa yokutshintsha kwejometri yesinyithi.Xa kuthelekiswa nezinye iigeyiji zoxinzelelo, ixabiso le-GF EGaIn/Cu/PDMS liphakathi.Njengenzwa, nangona i-GF yayo ingenakuba phezulu kakhulu, i-EGaIn / Cu / PDMS ibonisa utshintsho oluqinileyo lokumelana nokuphendula umqondiso ophantsi kumthwalo wokulinganisa ingxolo.Ukuvavanya ukuzinza kwe-conductivity ye-EGaIn / Cu / PDMS, ukunyanzeliswa kombane kwakubekwe iliso ngexesha lokujikeleza okuphindaphindiweyo kwe-stretch-stretch kwi-30% yoxinzelelo.Njengoko kubonisiwe kwifig.I-6b, emva kwe-4000 yokwelula imijikelezo, ixabiso lokumelana lihlala ngaphakathi kwe-10%, enokuthi ibe ngenxa yokubunjwa okuqhubekayo kwesikali ngexesha lokujikeleza okuphindaphindiweyo46.Ngaloo ndlela, ukuzinza kombane kwexesha elide le-EGaIn / Cu / PDMS njenge-electrode enwebekayo kunye nokuthembeka kwesignali njenge-strain gauge yaqinisekiswa.
Kweli nqaku, sixoxa ngeempawu zokumanzisa eziphuculweyo ze-GALM kwiindawo zetsimbi ezincinci ezibangelwa kukungena.Ukumanzisa okupheleleyo okuzenzekelayo kwe-EGaIn kwaphunyezwa kwimigangatho yentsimbi kunye nephiramidi kukho umphunga weHCl.Oku kunokuchazwa ngamanani ngokubhekiselele kumzekelo we-Wenzel kunye nenkqubo yokuqhawula, ebonisa ubungakanani be-post-microstructure efunekayo kwi-wicking-induced wetting.Ukumanzisa okuzenzekelayo kunye okukhethiweyo kwe-EGaIn, ekhokelwa yintsimbi ye-microstructured surface, yenza kube lula ukusebenzisa iingubo ezifanayo kwiindawo ezinkulu kwaye zenze iipateni zetsimbi zamanzi.I-EGaIn-coated Cu / PDMS substrates igcina uxhulumaniso lombane nangona yoluliwe kwaye emva kwemijikelezo yokwelula ngokuphindaphindiweyo, njengoko kuqinisekiswa yi-SEM, i-EDS, kunye nemilinganiselo yokumelana nombane.Ukongezelela, ukuchasana kombane kwe-Cu / PDMS ehlanganiswe ne-EGaIn iguquka ngokuguquguqukayo kwaye ithembekile ngokuhambelana ne-strain esetyenzisiweyo, ebonisa ukusetyenziswa kwayo okunokwenzeka njengenzwa yoxinzelelo.Izibonelelo ezinokuthi zibonelelwe ngumgaqo wokumanzisa isinyithi olwelo olubangelwa yi-imbibition ngolu hlobo lulandelayo: (1) Ukwaleka kwe-GaLM kunye nepateni inokufezekiswa ngaphandle kwamandla angaphandle;(2) Ukumanzisa kwe-GaLM kwindawo ye-microstructure eyenziwe ngobhedu yi-thermodynamic.ifilimu ye-GaLM enesiphumo izinzile naphantsi kwe-deformation;(3) ukutshintsha ubude bekholamu enobhedu inokwenza ifilimu ye-GaLM enobunzima obulawulwayo.Ukongezelela, le ndlela inciphisa inani le-GALM elifunekayo ukwenza ifilimu, njengoko iintsika zithatha inxalenye yefilimu.Ngokomzekelo, xa uluhlu lweentsika ezinobubanzi be-200 μm (kunye nomgama phakathi kweentsika ze-25 μm) zingeniswa, umthamo we-GaLM ofunekayo ekuqulunqweni kwefilimu (~ 9 μm3 / μm2) ithelekiswa nomthamo wefilimu ngaphandle iintsika.(25 µm3/µm2).Nangona kunjalo, kule meko, kufuneka kuthathelwe ingqalelo ukuba ukuchasana kwethiyori, kuqikelelwa ngokomthetho kaPuet, kwanda ngamaxesha alithoba.Lilonke, iimpawu zokumanzisa ezizodwa zeentsimbi ezingamanzi ekuxoxwe ngazo kweli nqaku zibonelela ngendlela esebenzayo yokufaka iintsimbi ezingamanzi kwiintlobo ngeentlobo zee-substrates zombane onwebekayo kunye nezinye izicelo ezivelayo.
Ii-substrates ze-PDMS zalungiswa ngokuxuba i-Sylgard 184 matrix (i-Dow Corning, e-USA) kunye ne-hardener kwi-ratio ye-10: 1 kunye ne-15: i-15: i-tensile tests, ilandelwa kukunyanga kwi-oven kwi-60 ° C.Ubhedu okanye isilicon yafakwa kwi-silicon wafers (Silicon Wafer, Namkang High Technology Co., Ltd., Republic of Korea) kunye ne-PDMS substrates ezinomaleko wokuncamathelisa we-titanium we-10 nm kusetyenziswa inkqubo yesiko lokutshiza.I-columnar kunye ne-pyramidal structures zifakwe kwi-substrate ye-PDMS kusetyenziswa inkqubo ye-silicon wafer photolithographic.Ububanzi kunye nobude bepateni yephiramidi ngama-25 kunye ne-18 µm, ngokulandelelanayo.Umphakamo wepatheni yebar yalungiswa kwi-25 µm, 10 µm, kunye ne-1 µm, kwaye ububanzi bayo kunye nepitch yahluka ukusuka kwi-25 ukuya kwi-200 µm.
I-angle yoqhagamshelwano ye-EGaIn (i-gallium 75.5% / indium 24.5%,> 99.99%, i-Sigma Aldrich, iRiphabhlikhi yaseKorea) yalinganiswa ngokusebenzisa i-analyzer ye-drop-shape (DSA100S, KRUSS, eJamani). I-angle yoqhagamshelwano ye-EGaIn (i-gallium 75.5% / indium 24.5%,> 99.99%, i-Sigma Aldrich, iRiphabhlikhi yaseKorea) yalinganiswa ngokusebenzisa i-analyzer ye-drop-shape (DSA100S, KRUSS, eJamani). Краевой угол EGaIn ( галлий 75,5 %/индий 24,5 %, >99,99 %, Sigma Aldrich, Республика Корея) измеряли с помощью каплевидного Генирсская аналипублика Корея) I-angle edge ye-EGaIn (i-gallium 75.5% / indium 24.5%,> 99.99%, i-Sigma Aldrich, iRiphabhlikhi yaseKorea) yalinganiswa ngokusebenzisa i-droplet analyzer (DSA100S, KRUSS, eJamani). EGaIn（镓75.5%/铟24.5%，>99.99%，Sigma Aldrich，大韩民国）的接触角使用滴分析仪（DSA100S,KRUSS,徉。 I-EGaIn (gallium75.5%/indium24.5%,>99.99%, Sigma Aldrich, 大韩民国) yalinganiswa ngokusebenzisa i-analyzer yoqhagamshelwano (DSA100S, KRUSS, eJamani). Краевой угол EGain (галлий 75,5%/индий 24,5%, >99,99%, Sigma Aldrich, Республика Корея) I-angle edge ye-EGaIn (i-gallium 75.5% / indium 24.5%,> 99.99%, i-Sigma Aldrich, iRiphabhlikhi yaseKorea) yalinganiswa ngokusebenzisa i-shape cap analyzer (DSA100S, KRUSS, eJamani).Beka i-substrate kwi-5 cm × 5 cm × 5 cm kwigumbi leglasi kwaye ubeke i-4-5 μl yethontsi ye-EGaIn kwi-substrate usebenzisa isirinji ye-0.5 mm ububanzi.Ukwenza i-HCl umphunga ophakathi, i-20 μL yesisombululo se-HCl (37 wt.%, i-Samchun Chemicals, iRiphabhlikhi yaseKorea) yabekwa ecaleni kwe-substrate, ekhutshwe ngokwaneleyo ukuze igcwalise igumbi ngaphakathi kwe-10 s.
Umphezulu wawunomfanekiso usebenzisa i-SEM (Tescan Vega 3, Tescan Korea, Republic of Korea).I-EDS (i-Tescan Vega 3, i-Tescan Korea, iRiphabhlikhi yaseKorea) yayisetyenziselwa ukufunda uhlalutyo lomgangatho we-elemental kunye nokusabalalisa.I-EGaIn/Cu/PDMS i-topography yomphezulu yahlalutywa kusetyenziswa i-optical profilometer (I-Profilm3D, i-Filmetrics, e-USA).
Ukuphanda utshintsho kwi-conductivity yombane ngexesha lemijikelezo yokwelula, iisampuli kunye nangaphandle kwe-EGaIn zaxinzelelwa kwisixhobo sokwelula (i-Bending & Stretchable Machine System, i-SnM, iRiphabhlikhi yaseKorea) kwaye yaxhunywa ngombane kwi-Keithley 2400 yomthombo wemitha. Ukuphanda utshintsho kwi-conductivity yombane ngexesha lemijikelezo yokwelula, iisampuli kunye nangaphandle kwe-EGaIn zaxinzelelwa kwisixhobo sokwelula (i-Bending & Stretchable Machine System, i-SnM, iRiphabhlikhi yaseKorea) kwaye yaxhunywa ngombane kwi-Keithley 2400 yomthombo wemitha. Для исследования изменения электропроводности во время циклов растяжения образцы с EGaIn и без него закрепляли на оборудования для публика Корея) и электрически подключали к измерителю источника Keithley 2400. Ukufunda utshintsho kwi-conductivity yombane ngexesha lemijikelezo yokwelula, iisampulu kunye nangaphandle kwe-EGaIn zifakwe kwisixhobo sokwelula (i-Bending & Stretchable Machine System, i-SnM, iRiphabhlikhi yaseKorea) kunye nombane oxhunywe kwi-Keithley 2400 yomthombo wemitha.Ukufunda utshintsho kwi-conductivity yombane ngexesha lemijikelezo yokwelula, iisampulu kunye nangaphandle kwe-EGaIn zifakwe kwisixhobo esilula (i-Bending kunye ne-Stretching Machine Systems, i-SnM, iRiphabhlikhi yaseKorea) kunye nombane oxhunywe kwi-Keithley 2400 SourceMeter.Ilinganisa utshintsho lokumelana noluhlu ukusuka kwi-0% ukuya kwi-70% yoxinzelelo lwesampulu.Kuvavanyo lozinzo, utshintsho ekuxhathiseni lulinganiswe ngaphezu kwe-4000 30% imijikelezo yoxinzelelo.
Ngolwazi oluthe kratya malunga noyilo lwesifundo, jonga i-Nature study abstract eqhagamshelwe kweli nqaku.
Idatha exhasa iziphumo zolu phononongo inikezelwe kwiiNkcukacha ezoNgezelelweyo kunye neefayile zeDatha eRaw.Eli nqaku libonelela ngedatha yokuqala.
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